BC856, BC857, BC860 are three PNP silicon AF transistors with high current gain, low collector-emitter saturation voltage and low noise, suitable for AF input stages and driver applications.
The Infineon BC856‑BC860 series comprises PNP silicon AF transistors designed for low‑noise, high‑gain applications such as AF input stages and driver circuits. The series includes complementary NPN types (BC846‑BC850) and is offered in a compact SOT‑23 package with standard pin configuration (1 = Base, 2 = Emitter, 3 = Collector).
Key electrical characteristics are provided, including maximum voltage ratings, collector current limits, power dissipation, transition frequency, and capacitances. The document also contains package dimensions, marking layout, and legal notices from Infineon Technologies AG.
| Collector‑emitter voltage (VCEO) max | 65 V (BC856), 45 V (BC857/BC860), 30 V (BC858/BC859) |
|---|---|
| Collector‑base voltage (VCBO) max | 80 V (BC856), 50 V (BC857/BC860), 30 V (BC858/BC859) |
| DC collector current (IC) max | 100 mA |
| Total power dissipation (PD) max | 330 mW |
| Transition frequency (ft) | 250 MHz |
| Package type | SOT‑23 |
They are supplied in an SOT‑23 surface‑mount package.
The BC856 can withstand up to 65 V between collector and emitter.
The transistors have a transition frequency of up to 250 MHz.