IPP60R299CP CoolMOSTM Power Transistor is a low RonxQg, ultra low gate charge, extreme dv/dt rated, high peak current capability power transistor.
The IPP60R299CP is a CoolMOS CP power transistor designed for hard‑switching SMPS topologies. It offers ultra‑low gate charge, low on‑state resistance, and high peak current capability, and complies with RoHS and JEDEC standards.
Key specifications include a continuous drain current of 11 A at 25 °C, pulsed drain current of 34 A, typical on‑state resistance of 0.299 Ω, thermal resistance junction‑case of 1.3 K/W, and a power dissipation rating of 96 W. The device also features avalanche energy of 290 mJ (single pulse) and a gate threshold voltage of 2.5 V typical.
| Continuous drain current (Id) | 11 A |
|---|---|
| Pulsed drain current (Id,pulse) | 34 A |
| On‑state resistance (Rds(on)) typical | 0.299 Ω |
| Thermal resistance junction‑case | 1.3 K/W |
| Power dissipation (Pd) at 25 °C | 96 W |
| Avalanche energy (single pulse) | 290 mJ |
| Gate threshold voltage (Vgs(th)) typical | 2.5 V |
The device can handle a continuous drain current of 11 A at 25 °C.
The typical on‑state resistance is 0.299 Ω at 25 °C.
It can absorb up to 290 mJ of avalanche energy in a single pulse.
The thermal resistance junction‑case is 1.3 K/W.