Infineon IPW50R199CP CoolMOS Power Transistor Datasheet

IPW50R199CP CoolMOSTM power transistor features the lowest figure of merit RON x Qg, ultra low gate charge, extreme dv/dt rated, high peak current capability, Pb-free lead plating; RoHS compliant and qualified according to JEDEC for target applications.


Infineon IPW50R199CP CoolMOS Power Transistor Datasheet - cover page
Brand
Infineon
Category
Power Management
Document type
Datasheet
Language
English
Pages
10
File format
PDF
File size
314 KB
Published
06 April, 2012
Updated
28 September, 2023
MD5 checksum
09F825939C2D94148CA10269CD43570A

About this manual

The IPW50R199CP is a CoolMOS power transistor designed for hard and soft switching SMPS topologies, such as ATX power supplies, notebook adapters, and LCD TV inverters. It offers ultra‑low gate charge, high peak current capability, and is RoHS compliant.

Key specifications include a continuous drain current of 17 A, pulsed drain current of 40 A, power dissipation up to 139 W, and a typical on‑state resistance of 0.18 Ω. The device features a gate threshold voltage around 2.5 V, input capacitance of 1800 pF, and avalanche energy of 436 mJ.

What's inside

  • Product Summary
  • Maximum ratings
  • Thermal characteristics
  • Electrical characteristics
  • Dynamic characteristics
  • Typical output characteristics
  • Outline

Specifications

Power dissipation (Pd)139 W

Frequently asked questions

How much power can the IPW50R199CP dissipate safely?

It can dissipate up to 139 W at a case temperature of 25 °C.

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