The IPA90R500C3 CoolMOS™ Power Transistor features the lowest RON x Qg, extreme dv/dt rating, high peak current capability, qualified according to JEDEC1) for target applications, Pb-free lead plating; RoHS compliant, ultra low gate charge CoolMOS™ 900V is designed for: Quasi Resonant Flyback / Forward topologies, PC Silverbox and consumer applications, Industrial SMPS
The IPA90R500C3 is a 900 V CoolMOS power transistor from Infineon Technologies, designed for quasi‑resonant flyback/forward topologies, PC power supplies, consumer applications, and industrial SMPS. It features a low figure‑of‑merit (Rds·Q), ultra‑low gate charge, high peak current capability, and RoHS‑compliant, Pb‑free construction.
The document lists maximum ratings, thermal and electrical characteristics, dynamic behavior, gate‑charge data, and package dimensions for the PG‑TO220 FP package. Typical applications include high‑frequency switching power supplies where low loss and fast switching are required.
| Maximum drain‑source voltage (Vds) | 900 V |
|---|---|
| Continuous drain current (Id) at 25 °C | 4 A |
| Pulsed drain current (Id, pulse) at 25 °C | 6.8 A |
| Gate charge total (Qg) | 68 nC |
| Output capacitance (Coss) | 83 pF |
| Maximum power dissipation (Pd) at 25 °C | 34 W |
| Package type | PG‑TO220 FP |
The device is rated for a maximum drain‑source voltage of 900 V.
It can conduct a continuous drain current of 4 A at 25 °C.
The total gate charge is 68 nC.
It is supplied in a PG‑TO220 FP (fully isolated) package.