The SPP21N50C3, SPI21N50C3 and SPA21N50C3 are Cool MOS™ power transistors that feature the world's best RDS(on) and ultra low effective capacitances. These transistors have periodic avalanche rating, extreme dv/dt rating, ultra low gate charge and improved transconductance.
This datasheet provides the electrical, thermal and mechanical specifications for Infineon's SPP21N50C3, SPI21N50C3 and SPA21N50C3 Cool MOS power transistors. Key parameters such as maximum drain current, breakdown voltage, gate‑source rating and power dissipation are listed together with characteristic curves.
The document also includes safety and handling notes, JEDEC compliance information, and dimensional drawings for the TO‑220, TO‑262 and TO‑220FP packages. It is intended for designers and engineers selecting MOSFETs for high‑voltage, high‑current applications.
| Continuous drain current (Id) | 21 A |
|---|---|
| Gate‑source voltage (Vgs) continuous | +20 V |
| Gate‑source voltage (Vgs) AC (>1 Hz) | +30 V |
| Power dissipation at 25 °C (P_D) | 34.5 W |
| Operating temperature range | -55 °C to +150 °C |
The transistor can handle a continuous drain current of 21 A.
The device is rated for a continuous gate‑source voltage of +20 V and +30 V for AC operation above 1 Hz.
At a case temperature of 25 °C the maximum power dissipation is 34.5 W.
It operates from –55 °C up to +150 °C for both storage and operation.