BAV70 is a silicon switching diode produced by ON Semiconductor. Its maximum reverse voltage is 80V, peak reverse voltage is 85V, maximum forward current is 200mA, maximum non-repetitive peak surge forward current is 4.5A, total power dissipation is 250mW, junction temperature is 150°C, and storage temperature is -65 to 150°C.
This document describes the Infineon BAV70 silicon switching diode, covering its high‑speed switching capabilities and common cathode configurations. It lists the various package types (SOT23, SOT363, SC74, SOT323) and their markings, along with mechanical dimensions and reel packaging details.
Key electrical specifications are presented, including reverse voltage, forward current, junction temperature, reverse recovery time, and diode capacitance. Maximum ratings and typical performance curves are given for different temperature conditions, enabling designers to assess suitability for their circuits.
| Reverse voltage (Va) | 80 V |
|---|---|
| Forward current (Ir) | 200 mA |
| Reverse recovery time (trr) | 4 ns |
| Diode capacitance (Cr) | 1.5 pF |
The BAV70 can withstand a reverse voltage of up to 80 V.
The diode is rated for a forward current of 200 mA.
The reverse recovery time is specified as 4 ns.
The BAV70 is offered in SOT23, SOT363, SC74, and SOT323 packages.