SPW11N60S5 is a Cool MOS™ power transistor, featuring new revolutionary high voltage technology, ultra low gate charge, periodic avalanche rated, extreme dv/dt rated, ultra low effective capacitances and improved transconductance.
The SPW11N60S5 is a 600 V Cool MOS power transistor from Infineon Technologies. It is designed for high‑voltage applications with ultra‑low gate charge, low on‑resistance and excellent dv/dt performance. The datasheet lists maximum ratings, electrical characteristics, thermal parameters and mechanical dimensions.
Key specifications include a continuous drain current of 11 A, a typical on‑state resistance of 0.34 mΩ, total gate charge of 41.5 nC, power dissipation of 125 W at 25 °C, and an operating temperature range of –55 °C to +150 °C. Thermal resistance, capacitances and avalanche ratings are also detailed.
| Continuous Drain Current (ID) | 11 A |
|---|---|
| Power Dissipation (PD) at 25 °C | 125 W |
| Operating Temperature Range | -55 °C to +150 °C |
The maximum continuous drain current is 11 A.
The device can dissipate up to 125 W at a case temperature of 25 °C.