BFR183W is an NPN silicon RF transistor, which is suitable for low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA.
The BFR183W transistor is presented with its maximum ratings, electrical and AC characteristics, and SPICE model parameters. It is intended for use in low‑noise, high‑gain broadband amplifier applications, supporting collector currents from 2 mA to 30 mA and operating frequencies up to 8 GHz.
The document includes thermal resistance data, power‑gain curves, and intermodulation intercept point information, as well as handling precautions for this electrostatic‑discharge‑sensitive device. Contact Infineon distributors for additional application notes or CD‑ROMs containing example circuits.