IPA50R520CP is a CoolMOSTM power transistor with the lowest RON x Qg figure of merit, ultra low gate charge, extreme dv/dt rating, high peak current capability, lead-free lead plating and RoHS compliance.
The IPA50R520CP CoolMOS power transistor is presented with its key specifications, including low on‑resistance, ultra‑low gate charge and high peak current capability. The document lists maximum ratings, thermal and electrical characteristics, and typical performance curves for use in SMPS, lamp ballast and other high‑power applications.
Additional sections describe dynamic behavior such as dv/dt ruggedness, gate charge, capacitances, diode switching parameters and mechanical package dimensions. Legal and safety notices conclude the document.
| Continuous drain current (Id) | 7 A |
|---|---|
| Pulsed drain current (Ipp) | 15 A |
| On‑state resistance (Rds(on)) typical | 0.47 Ω |
| Gate threshold voltage (Vgs(th)) typical | 2.5 V |
| Input capacitance (Ciss) | 680 pF |
| Output capacitance (Coss) | 31 pF |
| Avalanche energy (single pulse) | 166 mJ |
| Operating temperature range | -55 °C to 150 °C |
| Package type | PG‑TO220FP |
The device can handle a continuous drain current of 7 A at 25 °C.
The typical on‑state resistance is 0.47 Ω.
It is supplied in a PG‑TO220FP fully isolated package.
The gate threshold voltage ranges from about 2.5 V to 3.5 V.