SPP11N60CFD is a high voltage power transistor with new revolutionary high voltage technology, ultra low gate charge, periodic avalanche rated, extreme dv/dt rated, high peak current capability, intrinsic fast-recovery body diode and extreme low reverse recovery charge
This datasheet describes the Infineon SPP11N60CFD Cool MOS™ power transistor, a high‑voltage, low‑gate‑charge device designed for demanding applications. Key features include an ultra‑low Rds(on), high peak current capability, fast‑recovery body diode and RoHS‑compliant, Pb‑free construction.
The document lists maximum ratings, thermal characteristics, detailed electrical parameters, typical output and transfer characteristics, gate‑charge data, avalanche behavior and mechanical dimensions for the PG‑TO220 package. It also contains legal and safety notices from Infineon Technologies AG.
| Power dissipation at 25 °C (Pd) | 125 W |
|---|---|
| Avalanche energy (single pulse) | 340 mJ |
Yes, it is Pb‑free and RoHS compliant.