BSS131 SIPMOS® Small-Signal-Transistor is an N-channel enhancement mode logic level MOSFET with high voltage and current capacity. It features Pb-free lead-plating and is RoHS compliant.
The BSS131 is an N‑channel enhancement‑mode, logic‑level small‑signal MOSFET offered in a PG‑SOT‑23 package. It features a low on‑resistance, high voltage rating, and RoHS‑compliant lead‑free construction.
The document provides electrical, thermal, and dynamic characteristics, including maximum ratings, typical output curves, and gate charge data, as well as package dimensions and ordering information.
| Maximum Drain‑Source Voltage (VDS) | 240 V |
|---|---|
| Continuous Drain Current (ID) | 0.11 A (at 25 °C) |
| Pulsed Drain Current (ID,pulse) | 0.4 A (at 25 °C) |
| On‑Resistance (RDS(on)) | 0.09 Ω (typ at VGS=4.5 V) |
| Gate Threshold Voltage (VGS(th)) | 0.8 V – 1.8 V (typ 0.8 V) |
| Power Dissipation (PD) | 0.36 W (at 25 °C) |
| Operating Temperature Range | -55 °C to 150 °C |
The BSS131 can withstand up to 240 V between drain and source.
The typical gate threshold voltage is about 0.8 V, with a range of 0.8 V to 1.8 V.
It can handle a continuous drain current of 0.11 A at 25 °C.
The typical on‑resistance is 0.09 Ω when VGS is 4.5 V.