Infineon SPW15N60C3 Power Transistor Datasheet

This is the 2.4 edition of the PFET data sheet released by Texas Instruments on September 21, 2021, which details the characteristics and electrical parameters of the device


Infineon SPW15N60C3 Power Transistor Datasheet - cover page
Brand
Infineon
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
11
File format
PDF
File size
936 KB
Published
06 April, 2012
Updated
30 September, 2023
MD5 checksum
F80C6E9B1C0070429CBD0916B86222CB

About this manual

The SPW15N60C3 is a Cool MOS™ power transistor designed for high‑voltage applications up to 650 V and continuous drain currents of 15 A. It features ultra‑low gate charge, low on‑state resistance, and RoHS‑compliant, lead‑free packaging in a PG‑TO247 case.

The document lists maximum ratings, thermal characteristics, detailed electrical parameters, typical output and transfer curves, gate‑charge data, avalanche ratings, and mechanical dimensions. It also includes safety notices and contact information for Infineon Technologies.

What's inside

  • Maximum Ratings
  • Thermal Characteristics
  • Electrical Characteristics
  • Typical Output Characteristics
  • Gate Charge Characteristics
  • Avalanche SOA
  • Drain‑Source Breakdown Voltage
  • Capacitances
  • Avalanche Power Losses
  • Mechanical Dimensions

Specifications

Power dissipation at 25 °C (P_D)156 W

Frequently asked questions

How much power can the transistor dissipate at 25 °C?

It can dissipate up to 156 W when the case temperature is 25 °C.

What package does the SPW15N60C3 use?

The transistor is supplied in a PG‑TO247 package.

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