This document describes the features and characteristics of the SPI11N60CFD Cool MOS™ power transistor, including new revolutionary high voltage technology, ultra low gate charge, periodic avalanche rated, extreme dv/dt rated, high peak current capability, intrinsic fast-recovery body diode, extreme low reverse recovery charge, etc.
The SPI11N60CFD is a Cool MOS™ power transistor featuring ultra‑low gate charge, high peak current capability, and an intrinsic fast‑recovery body diode. It is RoHS‑compliant and qualified according to JEDEC for target applications.
The document provides maximum ratings, electrical and thermal characteristics, typical output curves, avalanche ratings, and package dimensions for the PG‑TO‑262 and PG‑TO‑220 versions.
| Gate‑source voltage (VGS) | +20 V |
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The gate‑source voltage is limited to +20 V.