IPP60R600CP CoolMOSTM Power Transistor Features• Lowest figure-of-merit RON x Qg• Ultra low gate charge• Extreme dv/dt rated• High peak current capability• Qualified according to JEDEC1) for target applications• Pb-free lead plating; RoHS compliantCoolMOS CP is designed for:• Hard switching SMPS topologies
The IPP60R600CP CoolMOS power transistor is designed for hard‑switching SMPS topologies and offers ultra‑low gate charge, low on‑resistance, and high peak current capability. It is RoHS‑compliant and qualified according to JEDEC for target applications.
The datasheet lists maximum ratings, thermal characteristics, static and dynamic electrical parameters, gate‑charge data, and typical output characteristics. Detailed graphs and package dimensions are provided for design reference.
| Continuous drain current (Id) at 25 °C | 6.1 A |
|---|---|
| Pulsed drain current (Id,pulse) at 25 °C | 15 A |
| Drain‑source on‑state resistance (Rds(on)) at 25 °C | 0.54 mΩ |
| Thermal resistance, junction‑to‑case | 2.1 K·W⁻¹ |
| Input capacitance (Ciss) at Vgs=0 V, f=1 MHz | 550 pF |
| Output capacitance (Coss) at f=1 MHz | 28 pF |
| Turn‑on delay time (t_on) | 17 ns |
| Total gate charge (Qg) from 0 V to 10 V | 21 nC |
The device can continuously conduct 6.1 A at a junction temperature of 25 °C.
The maximum power dissipation is 60 W at a case temperature of 25 °C.
It is supplied in a PG‑TO220 package.
The junction‑to‑case thermal resistance is 2.1 K·W⁻¹.