IPP60R385CP CoolMOSTM Power Transistor is a MOSFET from STMicroelectronics with the lowest RON x Qg, ultra low gate charge, extreme dv/dt rating and high peak current capability.
The IPP60R385CP CoolMOS power transistor from Infineon is designed for hard‑switching SMPS topologies. It offers a low figure‑of‑merit RDS(on)·QG, ultra‑low gate charge, high peak current capability and JEDEC qualification. The device is supplied in a Pb‑free PG‑TO220 package.
The document provides detailed electrical, thermal and dynamic parameters, including continuous and pulsed drain currents, power dissipation, avalanche energy, capacitances, gate‑charge characteristics and safe operating area curves. Package dimensions and outline drawings are also included.
| Continuous Drain Current (Id) | 9.0 A (typ, 25 °C) |
|---|---|
| Pulsed Drain Current (Id,pulse) | 27 A (25 °C) |
| Power Dissipation (Pd) | 83 W (25 °C) |
| On‑State Resistance (RDS(on)) | 0.35 mΩ (typ, 25 °C) |
| Gate Threshold Voltage (VGS(th)) | 2.5 V (typ) |
| Input Capacitance (Ciss) | 790 pF (typ) |
| Output Capacitance (Coss) | 38 pF (typ) |
| Total Gate Charge (Qg) | 17‑22 nC |
| Package | PG‑TO220 |
The maximum continuous drain current is 9.0 A at 25 °C.
The device can dissipate up to 83 W at a case temperature of 25 °C.
It is supplied in a PG‑TO220 surface‑mount package.