BFQ135 is a NPN 6.5 GHz wideband transistor produced by Philips company, which has excellent temperature characteristics and reliability, suitable for MATV and microwave amplifiers and other applications
The BFQ135 is an NPN wideband transistor offered by Philips Semiconductors. It is supplied in a 4‑lead dual‑emitter SOT172A2 ceramic package with isolated leads and is intended for applications such as MATV, microwave amplifiers, radar, oscilloscopes and spectrum analysers.
The document provides electrical limits, thermal characteristics, typical performance curves and mechanical dimensions, together with safety warnings regarding the beryllium‑oxide material used in the device.
| Collector current (Ic) max | 150 mA |
|---|---|
| Thermal resistance (junction‑to‑case) | 20 K/W |
| Storage temperature range | -65 °C to +150 °C |
| Maximum junction temperature | 200 °C |
It is supplied in a 4‑lead dual‑emitter SOT172A2 ceramic package.