BFQ135 is an NPN 6.5 GHz wideband transistor with optimum temperature profile and excellent reliability properties. It is suitable for applications such as MATV and microwave amplifiers.
The BFQ135 is an NPN wideband transistor offered in a 4‑lead SOT172A2 ceramic package. It is intended for use in MATV and microwave amplifiers, aerial amplifiers, radar, oscilloscopes, spectrum analysers and similar high‑frequency applications.
Key electrical parameters include a 19 V collector‑emitter voltage, 150 mA continuous collector current, 2.7 W power dissipation, and a transition frequency of 6.5 GHz. The device contains beryllium oxide, so it must be handled with care and disposed of as hazardous waste.
| Storage temperature range | -65 °C to +150 °C |
|---|---|
| Package type | SOT172A2 4‑lead ceramic |
The product contains beryllium oxide and must not be damaged; handling and disposal must follow hazardous‑waste regulations.
It is supplied in a studded ceramic SOT172A2 4‑lead package.