This document is a technical data sheet about BB639/BB659 Silicon Variable Capacitance Diodes. It describes the features and characteristics of these diodes for tuning of extended frequency band in VHF TV / VTR tuners, including high capacitance ratio, low series inductance, low series resistance, and excellent uniformity and matching.
The BB639 and BB659 are silicon variable capacitance diodes designed for tuning extended frequency bands in VHF TV and VTR tuners. They offer a high capacitance ratio, low series inductance and resistance, and excellent uniformity due to an in‑line matching assembly procedure.
The datasheet provides maximum ratings, electrical characteristics at 25 °C, capacitance values at various bias voltages, capacitance ratios, and temperature coefficients. Package markings and configurations are also listed for both part numbers.
| Diode reverse voltage (Ve) | 30 V |
|---|---|
| Peak reverse voltage (Vem) | 35 V |
| Forward current (If) | 20 mA |
| Operating temperature range | -55 °C to 150 °C |
| Storage temperature range | -55 °C to 150 °C |
| Diode capacitance (C_G) at Vp=1 V, f=1 MHz | 36‑40 pF |
| Capacitance ratio (C1/C2) | 13.5‑14.7 |
| Series resistance (Rs) | 0.65 Ω |
The diodes are rated for a reverse voltage of 30 V.
They operate from –55 °C up to 150 °C.
The forward current is specified as 20 mA.
Capacitance varies between 36 pF and 40 pF.