This document describes the features and characteristics of the silicon variable capacitance diodes BB639C/BB659C, which are mainly used for tuning the extended frequency band in VHF TV/VTR tuners. They have high capacitance ratio, low series inductance, low series resistance, and excellent uniformity and matching.
The BB639C, BB659C and BB659C-02V are silicon variable capacitance diodes intended for tuning extended frequency bands in VHF TV and VTR tuners. They offer a high capacitance ratio, low series inductance and resistance, and excellent uniformity due to an "in‑line" matching assembly procedure.
Key specifications include a diode reverse voltage of 30 V, peak reverse voltage of 35 V, forward current of 20 mA, and an operating temperature range from –55 °C to 150 °C. Electrical characteristics such as diode capacitance (e.g., 36.5 pF at 1 V, 1 MHz) and capacitance ratios (e.g., 14.2 for Cr4/Cr28) are provided for various bias conditions.
| Diode reverse voltage (Ve) | 30 V |
|---|---|
| Peak reverse voltage (Vem) | 35 V |
| Forward current (Ir) | 20 mA |
| Operating temperature range (Top) | -55 °C … 150 °C |
| Capacitance ratio (Cr4/Cr28) at Vp=1 V, Ve=28 V | 14.2 |
The maximum reverse voltage (Ve) is 30 V.
They operate from –55 °C up to 150 °C.
The forward current (Ir) is rated at 20 mA.