Infineon SPW20N60S5 Cool MOS Power Transistor Datasheet

This document describes the features and characteristics of the SPW20N60S5 Cool MOS™ power transistor, including new high voltage technology, ultra low gate charge, periodic avalanche rating, extreme dv/dt rating, ultra low effective capacitances, and improved transconductance.


Infineon SPW20N60S5 Cool MOS Power Transistor Datasheet - cover page
Brand
Infineon
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
11
File format
PDF
File size
481 KB
Published
05 April, 2012
Updated
29 September, 2023
MD5 checksum
83C08089C6110C5B76F1398F398A1006

About this manual

The SPW20N60S5 is a 600 V Cool MOS power transistor from Infineon Technologies. The document provides maximum ratings, thermal characteristics, and detailed electrical parameters for designers.

Key sections cover maximum drain current, breakdown voltage, on‑state resistance, gate charge, and avalanche energy, along with typical transient thermal impedance curves and package dimensions.

What's inside

  • Maximum Ratings
  • Thermal Characteristics
  • Electrical Characteristics
  • Typical Transient Thermal Characteristics
  • Power Dissipation and Safe Operating Area
  • Typical Output Characteristic
  • Drain‑Source On‑State Resistance
  • Gate Charge
  • Forward Characteristics of Body Diode
  • Avalanche Power Losses

Specifications

Gate‑source voltage rating+20 V

Frequently asked questions

What is the gate‑source voltage rating?

The device is rated for a gate‑source voltage of +20 V.

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