The SPW20N60S5 is a high-voltage power transistor with a maximum voltage of 600 volts, a minimum resistance of 0.19 ohms, and a maximum current of 20 amperes. The transistor features new revolutionary high-voltage technology, ultra-low gate charge, periodic avalanche rating, extreme dv/dt rating, ultra-low effective capacitances, and improved transconductance.
The SPW20N60S5 Cool MOS™ power transistor from Infineon offers a 600 V drain‑source breakdown voltage, 20 A continuous drain current at 25 °C, and ultra‑low gate charge for efficient switching. It features low on‑state resistance, low capacitances, and high transconductance, making it suitable for high‑frequency and high‑power applications.
The datasheet provides detailed maximum ratings, thermal characteristics, electrical parameters, and characteristic curves, including avalanche energy, gate‑charge curves, and safe operating area graphs. Mechanical dimensions and packaging information are also included for PCB layout and thermal design.
| Continuous Drain Current (ID) @ 25 °C | 20 A |
|---|---|
| Continuous Drain Current (ID) @ 100 °C | 13 A |
| Pulsed Drain Current (ID,pulse) | 40 A |
| Gate‑Source Voltage (VGS) | +20 V (DC), +30 V (AC >1 Hz) |
| Power Dissipation (PD) @ 25 °C | 208 W |
| Operating Temperature Range | -55 °C to +150 °C |
| Avalanche Energy (single pulse) | 690 mJ |
The SPW20N60S5 can conduct up to 20 A continuously at a case temperature of 25 °C.
It can dissipate up to 208 W when the case temperature is 25 °C.