This is a dual half bridge driver IC that is compatible with low ohm input N-channel MOSFETs, has independent MOSFET inputs, PWM frequency up to 50 kHz, works with supply voltage as low as 7.5V, low EMC sensitivity and emission, adjustable dead time with shoot through protection, deactivation of dead time and shoot through protection possible, short circuit protection for each Mosfet, driver undervoltage shut down, driver IC reverse polarity protection, disable function, TTL input characteristics, 1 bit diagnosis, integrated bootstrap diodes, etc. functions.
The TLE6282G is a dual half‑bridge driver IC designed for N‑channel MOSFET power stages. It integrates protection functions such as short‑circuit detection, undervoltage shutdown, reverse‑polarity protection, and adjustable dead‑time with shoot‑through protection. The device can operate from 7.5 V to 60 V and is suitable for high‑current motor bridges, injector and valve drives, and four‑fold low‑side driver configurations.
Key features include independent control of each half‑bridge, PWM operation up to 50 kHz, low EMC emission, TTL‑compatible inputs, and built‑in bootstrap diodes. The datasheet details electrical characteristics, maximum ratings, pin assignments, and recommended start‑up procedures for reliable integration into automotive and industrial applications.
| Supply voltage (Vs) | 7.5 V – 60 V |
|---|---|
| Operating temperature range (Tj) | -40 °C to +150 °C |
| PWM frequency | up to 50 kHz |
| Adjustable dead‑time range | 100 ns – 3.1 µs (1.5 V–3.5 V) |
| Short‑circuit detection threshold (Low side) | 0.5 V – 1.0 V |
| High‑level input voltage (VIH) | 2.0 V |
The device operates from 7.5 V up to 60 V.
The driver can handle PWM frequencies up to 50 kHz.
Applying 1.5 V–3.5 V to the DT/DIS pin varies dead‑time from 100 ns to 3.1 µs; below 1 V dead‑time is disabled.