This document describes the features and characteristics of the BB 835 silicon tuning diode from Dinghao Semiconductor Group. The diode has an extended frequency range up to 2.8 GHz and is specially designed for use in TV-sat indoor units. Its high capacitance ratio makes it suitable for TV-sat indoor units. The document provides detailed information on maximum ratings, electrical characteristics, and package outline.
The BB 835 silicon tuning diode is designed for TV‑sat indoor units and offers an extended frequency range up to 2.8 GHz with a high capacitance ratio. It is supplied in a yellow SOD‑323 package (Q62702‑B802) and is intended for use in high‑frequency tuning applications.
Key specifications include a reverse voltage of 30 V (35 V for >5 kΩ), a forward current of 20 mA, operating temperature from –55 °C to +150 °C, and a thermal resistance below 450 K/W. Electrical characteristics at 25 °C show a typical diode capacitance of 9.1 pF at 1 V/1 MHz and a capacitance ratio of about 13.5.
| Reverse voltage (Va) | 30 V |
|---|---|
| Reverse voltage (R>5kΩ) (Vem) | 35 V |
| Forward current (I) | 20 mA |
| Operating temperature range | -55 °C … +150 °C |
| Diode capacitance (Va=1 V, f=1 MHz) typical | 9.1 pF |
| Capacitance ratio (Cr/Croe) | 13.5 |
| Series resistance (rs) typical | 2.4 Ω |
| Series inductance (Ls) typical | 1.4 nH |
The BB 835 diode can withstand a reverse voltage of 30 V, or 35 V when the resistance is greater than 5 kΩ.
At 1 V and 1 MHz, the typical diode capacitance is 9.1 pF.
The diode operates from –55 °C up to +150 °C.
The forward current rating is 20 mA.