HITFET® BTS 917 Smart Lowside Power Switch is a Smart SIPMOS® chip-on-chip technology N-channel vertical power FET fully protected by embedded protected functions.
The BTS 917 is a smart low‑side power switch designed for resistive, inductive and capacitive loads in 12 V and 24 V DC applications. It replaces electromechanical relays and offers integrated protection functions such as over‑voltage, overload, short‑circuit and thermal shutdown.
The document lists maximum ratings, electrical characteristics, protection features, and package dimensions. Key parameters include a 60 V drain‑source voltage, 3.5 A nominal load current, and built‑in ESD protection, making it suitable for a wide range of industrial and automotive power‑switching tasks.
| Drain‑source voltage (Vps) | 60 V |
|---|---|
| Nominal load current | 3.5 A |
| Unclamped single pulse inductive energy | 1000 mJ |
| Operating temperature range | -40 °C to +150 °C |
The device can withstand up to 60 V drain‑source voltage.
The BTS 917 is rated for a nominal load current of 3.5 A.