The HITFETBTS 933 is an intelligent lowside power switch from Texas Instruments. It features logic level input, input protection, overload protection, short circuit protection, overvoltage protection, current limitation, etc. The product has a rated drain-source voltage of 60 V, a rated on-state resistance of 50 mΩ, a rated current of 3 A, and a maximum current that can be adjusted with an external resistor.
The BTS 933 is a N‑channel vertical power FET with Smart SIPMOs® chip‑on‑chip technology. It offers logic‑level input, built‑in protection functions such as over‑voltage, overload, short‑circuit, and thermal shutdown, making it suitable for resistive, inductive and capacitive loads in 12 V and 24 V DC applications.
The document lists maximum ratings, detailed electrical characteristics, block diagram, protection functions, and package dimensions. It also includes ordering codes and legal notices from Siemens Semiconductor Group.
| Drain‑source voltage (Vds) | 60 V |
|---|---|
| Power dissipation (Pmax) | 90 W |
| Unclamped single pulse inductive energy | 2000 mJ |
| Thermal resistance (junction‑case) | 1.4 K/W |
The maximum drain‑source voltage is 60 V.
It can dissipate up to 90 W of power.
It includes over‑voltage, overload, short‑circuit, thermal shutdown, and ESD protection.