HITFET® BTS 933 is a smart lowside power switch launched by Dinghao Semiconductor. It has logic level input, ESD protection, thermal shutdown, overload protection, short circuit protection, overvoltage protection, current limitation, maximum current adjustable with external resistor, current sense, status feedback and analog driving.
The BTS 933 is a Smart Lowside Power Switch based on N‑channel vertical power FET technology. It offers logic‑level input, over‑current, over‑temperature, and ESD protection, making it suitable for resistive, inductive, and capacitive loads in 12 V and 24 V DC applications and as a replacement for electromechanical relays.
The document lists maximum ratings, electrical characteristics, and package dimensions. Key parameters include a 60 V drain‑source voltage, 7 A nominal load current, 90 W power dissipation, and operation from –40 °C to +150 °C. Ordering codes and mechanical drawings are also provided.
| Drain‑source voltage (Vds) | 60 V |
|---|---|
| Nominal load current | 7 A |
| Power dissipation (Prot) | 90 W |
| Unclamped single pulse inductive energy | 2000 mJ |
| Thermal resistance (junction‑case) | 1.4 K/W |
The maximum drain‑source voltage is 60 V.
The device is rated for a nominal load current of 7 A.
It can dissipate up to 90 W of power.
The device operates from –40 °C to +150 °C.