This document describes the features and characteristics of the HITFET BTS 933 Smart Lowside Power Switch, including logic level input, input protection, thermal shutdown, overload protection, short circuit protection, overvoltage protection, current limitation, etc. The product is suitable for switching or linear applications with various resistive, inductive, and capacitive loads, and can be used as a microcontroller-compatible power switch for 12V and 24V DC applications, replacing electromechanical relays and discrete circuits.
The Siemens BTS 933 is a N‑channel vertical power FET designed for low‑side switching in 12 V and 24 V DC applications. It integrates protection functions such as ESD, overload, short‑circuit, over‑voltage and thermal shutdown, making it a direct replacement for electromechanical relays.
The document provides maximum ratings, detailed electrical characteristics, thermal data, protection features, and ordering codes. It also includes a block diagram and typical transfer characteristics for design reference.
| Drain‑source voltage (VDS) | 60 V |
|---|---|
| Power dissipation (P_R) | 90 W @ 25 °C |
| Operating temperature range | -40 °C to +150 °C |
| Storage temperature range | -55 °C to +150 °C |
| Nominal load current | 7 A |
| Unclamped single‑pulse inductive energy | 2000 mJ |
| Input threshold voltage (V_TH) | 1.7 V – 2.2 V |
| Electrostatic discharge voltage (Human Body Model) | 3000 V |
| Junction‑to‑case thermal resistance | 1.4 K/W |
The device is rated for a maximum drain‑source voltage of 60 V.
It can dissipate up to 90 W when the case temperature is 25 °C.
The component operates from –40 °C up to +150 °C.
It can tolerate an unclamped single‑pulse inductive energy of 2000 mJ.