2SK2638-01MR is a N-channel MOS-FET from Dinghao Electronics. It features high switching speed, low on-resistance, no secondary breakdown, low driving power, high voltage, VGS = ± 30V guaranteed, repetitive avalanche rated, and is suitable for switching regulators, UPS, DC-DC converters, and general purpose power amplifiers.
The 2SK2638-01MR is a high‑speed, low‑on‑resistance N‑channel MOSFET designed for switching regulators, UPS, DC‑DC converters and general‑purpose power amplifiers. It offers a 450 V drain‑source rating, 10 A continuous drain current and low driving power.
Key features include high voltage tolerance, low on‑resistance (0.58‑0.65 Ω), fast turn‑on/off times, and robust avalanche capability. The datasheet provides detailed electrical and thermal characteristics, typical output curves, and recommended operating conditions.
| Drain‑Source Voltage (VDS) | 450 V |
|---|---|
| Continuous Drain Current (ID) | 10 A |
| Pulsed Drain Current (ID(pulse)) | 40 A |
| Gate‑Source Voltage (VGS) | +30 V |
| On‑Resistance (RDS(on)) | 0.58‑0.65 Ω |
| Maximum Power Dissipation (PD) | 50 W |
| Operating Temperature Range | -55 °C to +150 °C |
The MOSFET is rated for a maximum drain‑source voltage of 450 V.
It can conduct up to 10 A continuously at a case temperature of 25 °C.
The on‑state resistance ranges from 0.58 Ω to 0.65 Ω at 5 A and 10 V VGS.