Key facts
- Brand
- FUJI
- Model
- 2SK2638-01MR
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-04-01
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Collmer Semiconductor 2SK2638-01MR N-channel MOSFET Datasheet
The 2SK2638-01MR is a high‑speed, low‑on‑resistance N‑channel MOSFET designed for switching regulators, UPS, DC‑DC converters and general‑purpose power amplifiers. It offers a 450 V drain‑source rating, 10 A continuous drain current and low driving power.
Key features include high voltage tolerance, low on‑resistance (0.58‑0.65 Ω), fast turn‑on/off times, and robust avalanche capability. The datasheet provides detailed electrical and thermal characteristics, typical output curves, and recommended operating conditions.
FUJI 2SK2638-01MR specifications
| Drain‑Source Voltage (VDS) | 450 V |
|---|---|
| Continuous Drain Current (ID) | 10 A |
| Pulsed Drain Current (ID(pulse)) | 40 A |
| Gate‑Source Voltage (VGS) | +30 V |
| On‑Resistance (RDS(on)) | 0.58‑0.65 Ω |
| Maximum Power Dissipation (PD) | 50 W |
| Operating Temperature Range | -55 °C to +150 °C |
Source: Collmer Semiconductor 2SK2638-01MR N-channel MOSFET Datasheet
All FUJI 2SK2638-01MR documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum drain‑source voltage of the 2SK2638-01MR?
The MOSFET is rated for a maximum drain‑source voltage of 450 V.
From: Collmer Semiconductor 2SK2638-01MR N-channel MOSFET Datasheet
How much continuous drain current can the device handle?
It can conduct up to 10 A continuously at a case temperature of 25 °C.
From: Collmer Semiconductor 2SK2638-01MR N-channel MOSFET Datasheet