This document describes the features and characteristics of the 2003 Mitsubishi HVIGBT module CM800E2C-66H. The module is suitable for high power switching and is insulated. It has a current rating of 800A and a voltage rating of 3300V.
The CM800E2C-66H is a high‑voltage insulated gate bipolar transistor (HVIGBT) module designed for high‑power switching and insulated‑type applications such as DC choppers and dynamic braking choppers. It features an insulated base plate and is supplied as a single‑element pack for brake use.
The datasheet lists maximum ratings, electrical characteristics, and performance curves, including collector‑emitter voltage, gate‑emitter voltage, continuous and pulse currents, dissipation, thermal limits, isolation voltage, and mechanical mounting specifications. These data help engineers select and integrate the module into high‑power power electronic systems.
| Continuous collector current (Ic) | 800 A |
|---|---|
| Pulse collector current (ICM, Pulse) | 1600 A |
| Junction temperature range (Tj) | -40 ~ +150 °C |
| Mass | 1.5 kg |
| Main terminal mounting torque (M8 screw) | 6.67 ~ 13.00 N‑m |
It is rated for a continuous collector current of 800 A.
The typical mass of the module is 1.5 kg.
The main terminal screws (M8) should be torqued to 6.67 – 13.00 N·m.