The CM800E6C-66H is a high power switching use insulated gate bipolar transistor module produced by Mitsubishi. Its features are collector-emitter voltage of 3300V and rated current of 800A. It is suitable for traction drives, DC choppers, dynamic braking choppers and other fields.
The CM800E6C-66H is a 3rd‑generation high‑voltage insulated gate bipolar transistor (HVIGBT) module designed for high‑power switching applications such as traction drives and DC choppers. It features an insulated type construction with a single element per pack and an AISiC baseplate.
The document provides maximum ratings, electrical and thermal characteristics, mechanical dimensions, performance curves, and switching time data, enabling engineers to assess suitability for high‑current, high‑voltage applications.
| Collector Current (Ic) | 800 A |
|---|---|
| Pulse Current (Icom) | 1600 A |
| Junction Temperature Range (Tj) | -40 °C to +150 °C |
The rated continuous collector current is 800 A.
The module can handle pulse currents up to 1600 A.
The junction temperature may be between –40 °C and +150 °C.