Mitsubishi CM1200HG-66H Datasheet

CM1200HG-66H is a high voltage insulated gate bipolar transistor (HVIGBT) module with a rated current of 1200A and a rated voltage of 3300V. It features high reliability and low power consumption, making it suitable for applications such as traction drives, high reliability converters/inverters, and DC choppers.


Mitsubishi CM1200HG-66H Datasheet - cover page
Brand
Mitsubishi
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
7
File format
PDF
File size
65 KB
Published
22 March, 2012
Updated
30 September, 2023
MD5 checksum
BDC665A5D547AB57881011A0BF27D234

About this manual

The CM1200HG-66H is a high‑power insulated‑gate bipolar transistor (HVIGBT) module designed for traction drives, high‑reliability converters/inverters, and DC choppers. It is an insulated‑type, single‑element pack with an AISiC baseplate.

The document lists maximum electrical ratings, thermal and mechanical characteristics, performance curves, and switching energy data, enabling engineers to assess suitability for high‑voltage, high‑current applications.

What's inside

  • Application
  • Maximum Ratings
  • Electrical Characteristics
  • Thermal Characteristics
  • Mechanical Characteristics
  • Performance Curves
  • Capacitance Characteristics
  • Switching Energy Characteristics
  • Reverse Recovery Characteristics
  • Free‑Wheel Diode Safe Operating Area

Specifications

Junction temperature range-40 °C to +150 °C
Mass1.35 kg

Frequently asked questions

What is the operating temperature range for the junction?

The junction temperature can operate from –40 °C up to +150 °C.

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