The CM400HB-90H is a high-voltage insulated gate bipolar transistor module manufactured by Mitsubishi Electric. Its rated current is 400A and its rated off-state voltage is 4500V.
The CM400HB-90H is a high‑voltage insulated‑gate bipolar transistor (HVIGBT) module designed for high‑power switching in inverters, converters, DC choppers, induction heating and DC‑DC converters. It is an insulated‑type, single‑element pack suitable for half‑bridge configurations.
The document lists maximum ratings, electrical and thermal characteristics, typical performance curves, and mechanical dimensions. Key parameters include a collector‑emitter voltage of 4500 V, continuous collector current of 400 A (800 A pulse), and a typical mass of 1.5 kg.
| Collector‑emitter voltage (VCE) | 4500 V |
|---|---|
| Gate‑emitter voltage (VGE) | +20 V |
| Continuous collector current (Ic) | 400 A |
| Pulse collector current (Ic, pulse) | 800 A |
| Maximum collector dissipation | 4700 W |
| Storage temperature range (Tstg) | -40 °C to +125 °C |
| Mass | 1.5 kg |
| Input capacitance (Cies) | 72 nF |
| Output capacitance (Coes) | 5.3 nF |
| Mechanical dimensions (L × W) | 38 mm × 29.5 mm |
The module is rated for a continuous collector current of 400 A.
It can handle a pulse collector current of up to 800 A.
The module measures 38 mm by 29.5 mm.