CM900HB-90H is a high voltage insulated gate bipolar transistor module manufactured by Mitsubishi Electric. Its maximum current is 900A and its maximum voltage is 4500V. The module uses second-generation HVIGBT technology and has high performance, high reliability and low cost.
The CM900HB-90H is a high‑power, insulated‑type HVIGBT module designed for use in inverters, converters, DC choppers, induction heating and DC‑to‑DC converters. It features a single‑element pack with insulated construction and mounting options for high‑current applications.
The document provides maximum ratings, electrical characteristics, thermal data, and typical performance curves, including collector‑emitter voltage, gate‑emitter voltage, current limits, dissipation, and switching characteristics for both the IGBT and its free‑wheel diode.
| Continuous collector current (Ic) | 900 A |
|---|---|
| Pulse collector current | 1800 A |
| Storage temperature range | -40 °C to +125 °C |
| Mass | 22 kg |
The module can handle a continuous collector current of 900 A.
It can sustain a pulse collector current of up to 1800 A.
The module weighs approximately 22 kg.