M54567P and M54567FP are four-circuit Darlington transistor arrays with clamping diodes. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.
The Mitsubishi M54567P/FP is a four‑circuit Darlington transistor array that includes built‑in clamping diodes. Each circuit uses PNP and NPN transistors to provide high‑current driving capability while maintaining a low input current.
The device is supplied in a 16‑pin flat package (16P2N‑A(FP)) and is rated for up to 1.5 A collector current per circuit, 50 V breakdown voltage, and operates over a temperature range of –20 °C to +75 °C. Detailed electrical, switching, and thermal characteristics are provided for design reference.
| Breakdown voltage (BVcEo) | 50 V |
|---|---|
| Maximum collector current per circuit | 1.5 A |
| Package type | 16P2N‑A(FP) |
| Supply voltage range | 4 V – 6 V |
| Operating temperature range | -20 °C to +75 °C |
| Clamping diode reverse voltage | 50 V |
Each circuit can handle up to 1.5 A of collector current.
The device is supplied in a 16‑pin flat package designated 16P2N‑A(FP).
The recommended supply voltage is between 4 V and 6 V.
The device operates from –20 °C up to +75 °C.