M54587P/FP is an 8-unit 500mA Darlington transistor array with clamp diode. The semiconductor integrated circuits perform high-current driving with extremely low input-current supply.
The M54587P and M54587FP are eight‑circuit Darlington transistor arrays offering high‑current driving capability (500 mA per circuit) and a breakdown voltage of 50 V. The devices feature active‑L level inputs, built‑in clamping diodes and operate over a temperature range of –20 °C to +75 °C. The FP version is supplied in a molded flat package for space‑saving designs.
The datasheet provides absolute maximum ratings, recommended operating conditions, electrical and switching characteristics, as well as typical performance curves. Key parameters include supply voltage range (4 V‑8 V), collector‑emitter voltage (50 V), and power dissipation up to 1.79 W (typical).
| Breakdown voltage (BVceo) | 50 V |
|---|---|
| Maximum collector current per circuit (Ic max) | 500 mA |
| Operating temperature range | -20 °C to +75 °C |
| Supply voltage (Vcc) range | 4 V to 8 V |
| Clamping diode forward current (IF) | 500 mA |
| Clamping diode reverse voltage (VR) | 50 V |
Each circuit can handle up to 500 mA of collector current.
The collector‑emitter breakdown voltage is rated at 50 V.
The recommended supply voltage is between 4 V and 8 V.
It operates from –20 °C up to +75 °C.