SRA2203 is a PNP silicon transistor from ST. It has switching application, interface circuit and driver circuit application features. Its features include built-in bias resistors, simplified circuit design, reduced number of parts and manufacturing processes, and high packing density.
The SRA2203 PNP silicon transistor from A K Semiconductor features built‑in bias resistors that simplify circuit design and reduce part count, offering high packing density for compact applications. It is supplied in a TO‑92 package and includes detailed pin connections for emitter, collector and base.
Key electrical specifications include a maximum collector‑emitter voltage of –50 V, collector current of 100 mA, power dissipation of 200 mW, and a transition frequency of 200 MHz. The device operates over a wide temperature range from –55 °C to 150 °C and includes characteristic curves for voltage and current performance.
| Maximum Collector‑Emitter Voltage (VCE) | -50 V |
|---|---|
| Maximum Emitter‑Base Voltage (VEB) | -40 V |
| Maximum Collector Current (IC) | 100 mA |
| Power Dissipation | 200 mW |
| Junction Temperature (TJ) | 125 °C |
| Transition Frequency (fT) | 200 MHz |
The SRA2203 can handle up to 100 mA of collector current.
The transistor is supplied in a TO‑92 package.
The device has a transition frequency of 200 MHz.
The maximum collector‑emitter voltage is –50 V and the maximum emitter‑base voltage is –40 V.