SUR503EF is a digital transistor with built-in bias resistors
The SURSO3EF is an epitaxial planar type NPN silicon transistor offered by AUK semiconductor. It is supplied in a SOT‑563F package and includes built‑in bias resistors. The document provides ordering information, absolute maximum ratings, and detailed electrical characteristics.
Key electrical parameters include a 50 V collector‑emitter voltage, 100 mA maximum output current, 100 mW power dissipation, and a DC current gain ranging from 80 to 200. Characteristic curves for output current versus voltage are also presented.
| Output Voltage (Vo) | 50 V |
|---|---|
| Input Voltage (Vi) | 20 V |
| Output Current (Io) | 100 mA |
| Power Dissipation (Pp) | 100 mW |
| Junction Temperature (Tj) | 150 °C |
| Storage Temperature (Tstg) | -55 ~ 150 °C |
| DC Current Gain (hFE) | 80‑200 |
| Transition Frequency (fT) | 200 MHz |
| Input Current (Ib) | 1.8 mA |
The maximum collector‑emitter voltage is 50 V.
The DC current gain (hFE) ranges from 80 to 200.
The transistor can dissipate up to 100 mW of power.