STS9012 is a PNP type silicon transistor produced by STS company, with good hFE linearity.
The STS9012 is a PNP silicon transistor intended for general‑purpose and switching applications. It is offered in a TO‑92 package and can be used as a complementary pair with the STS9013.
The datasheet lists absolute maximum ratings such as collector‑base voltage of –40 V and collector current of 500 mA, as well as electrical characteristics including a DC current gain of 96‑246 and a transition frequency of 150 MHz. Characteristic curves for collector‑emitter voltage versus current at various temperatures are also provided.
| Collector‑Base Voltage (Vcbo) | -40 V |
|---|---|
| Collector‑Emitter Voltage (Vceo) | -30 V |
| Emitter‑Base Voltage (Vebo) | -5 V |
| Collector Current (Ic) | 500 mA |
| Emitter Current (Ie) | 500 mA |
| Collector Dissipation (Pc) | 625 mW |
| Junction Temperature (Tj) | 150 °C |
| Storage Temperature Range | -55 °C to 150 °C |
The maximum collector current is 500 mA.
It can be stored from –55 °C up to 150 °C.