Industrial

QS8M12 is a low voltage drive Nch+Pch MOSFET with low on-resistance, high power and low voltage drive. It is mainly used for switching power supplies.

This document is a datasheet for the ROHM QS8M13 4V Drive Nch + Pch MOSFET. The MOSFET features low on-resistance, high power package, and low voltage drive, making it suitable for switching applications.

QS8M51 is a 4V drive Nch + Pch MOSFET with low on-resistance and small surface mount package. It is suitable for switching applications.

The QS5U16 is a transistor that combines an Nch MOSFET with a Schottky barrier diode. It features low on-state resistance, fast switching, low voltage drive, and low forward voltage. It is suitable for applications such as load switches and DC/DC conversion.

QS5U17 is a 2.5V drive Nch+SBD MOS FET with low on-state resistance, fast switching, low voltage drive (2.5V), and is widely used in load switching and DC/DC conversion.

QS5U21 is a 2.5V drive Pch+SBD MOS FET. The device has low on-state resistance and fast switching characteristics, built-in schottky barrier diode, low forward voltage, suitable for load switch and DC/DC conversion applications.

BAT 62 is a low power silicon Schottky diode for detectors up to GHz frequencies.

QS5U26 Transistor Rev.B is a Pch+ SBD MOSFET with features including low on-state resistance, fast switching, low voltage drive, and low forward voltage. It is suitable for switching applications.

The QS5U27 is a 2.5V drive Pch+SBD MOS FET with low voltage drive, low on-state resistance, fast switching, and a built-in Schottky diode. It is used in load switching, DC/DC conversion and other applications.

This document describes the maximum ratings and electrical characteristics of Semiconductor Group 1 Silicon Switching Diodes BAS 19...BAS 21.

The QS5U28 is a low voltage drive Pch+SBD MOS FET with low switching loss and low forward voltage, which is suitable for load switch and DC/DC conversion applications.