BAT 62 is a low power silicon Schottky diode for detectors up to GHz frequencies.
The BAT62 is a silicon Schottky low‑barrier diode intended for detector applications up to GHz frequencies. The datasheet lists the diode's maximum ratings, electrical characteristics, and package dimensions.
Key specifications include a reverse voltage of 40 V, a typical forward voltage of 0.58 V, and a diode capacitance of about 0.35 pF at 1 MHz. Thermal resistance, storage temperature range, and handling precautions are also documented.
| Reverse voltage (Vr) | 40 V |
|---|---|
| Forward current (Ir) | 20 mA |
| Typical forward voltage (Vf) | 0.58 V |
| Maximum reverse current (Ir) | 10 µA |
| Diode capacitance (Ct) typical | 0.35 pF |
| Maximum junction temperature (Ti) | 150 °C |
| Storage temperature range (Tsig) | -55 °C to +150 °C |
The BAT62 can withstand a reverse voltage of up to 40 V.
The typical forward voltage is 0.58 V.
The diode is rated for a maximum forward current of 20 mA.
The capacitance is about 0.35 pF (typical) at 1 MHz.