Industrial

QS5U33 is a 4V drive Pch+SBD MOSFET, which has low voltage drive, low on-state resistance and fast switching. It is suitable for load switch and DC/DC conversion applications.

CURA101 Thru CURA107 are SMD Ultra Fast Recovery Rectifiers. These diodes are ideal for surface mount applications. They feature easy pick and place, Underwriters Lab. flammability classification 94V-0, ultra fast recovery time: 50 - 75 nS and low leakage current.

The QS5U34 is a device that integrates Nch MOSFET and Schottky barrier diode. It features low on-state resistance, fast switching, and low voltage drive. It is suitable for load switches and DC/DC conversion.

The QS5U36 is a device that combines an N-channel MOSFET with a Schottky barrier diode, with low voltage drive (1.5V). It has low on-state resistance and fast switching characteristics, and the Schottky barrier diode has low forward voltage. Suitable for switching applications.

This product is a 48V input, 1.5V/35A output DC/DC converter with a power of 100W, high efficiency, standard package, and fixed frequency.

The QS6U22 Transistors is a package that combines Pch MOS FET with a Schottky barrier diode. It features low on-state resistance, fast switching, low voltage drive, and low forward voltage. It is suitable for applications such as load switches and DC/DC conversions.

QST8 low voltage large current npn bipolar junction transistor with collector current up to -500mA and collector saturation voltage down to -200mV

QST9 is a general-purpose amplifier suitable for low-frequency amplification and driver applications. It features a large collector current and low collector saturation voltage.

The QSX8 is a NPN type transistor from ROHM. It has large current and low voltage drop, and is suitable for low frequency amplifier circuits.

QSZ1 is a dual-emitter transistor produced by ROHM. It is mainly used in DC/DC converters and motor drivers. It has the characteristics of low VCE(sat) and small package.

This document describes the features and dimensions of the SSTA56 / MMSTA56 PNP general purpose transistor. It has a maximum collector-base voltage of -80V and an emitter-base voltage of -4V. The transistor has the same pin dimensions and complements the SSTA06 / MMSTA06. The document also provides packaging and marking specifications, as well as absolute maximum ratings and electrical characteristics.

UMT3904 / SST3904 / MMST3904 are 1/4 NPN general purpose transistors produced by ROHM. Its BVCEO > 40V (IC = 1mA), which can be used with UMT3906 / SST3906 / MMST3906.

UMT3906 / SST3906 / MMST3906 is a PNP general purpose transistor produced by ROHM. Its features are BVCEO > −40V (IC= −1mA), which can complement T3904/SST3904/MMST3909 and has low capacitance characteristics. The tube has SC-70 and SC-59 two kinds of package form.

SST4401 / MMST4401 is a NPN medium power transistor with a maximum collector-emitter reverse breakdown voltage of 40V (IC=1mA). It complements the SST4403 / MMST4403.