This document describes the maximum ratings and electrical characteristics of Semiconductor Group 1 Silicon Switching Diodes BAS 19...BAS 21.
The BAS 19 is a high‑speed, high‑voltage silicon switching diode offered by Siemens. It is supplied in a compact SOT‑23 package and is intended for use in applications requiring fast switching and low leakage.
Key electrical parameters include a reverse voltage rating of 100 V, a peak reverse voltage of 120 V, forward current of 250 mA, and a peak forward current of 625 mA. The device also specifies thermal resistance values, storage temperature range, and a reverse recovery time of 50 ns.
| Reverse voltage | 100 V |
|---|---|
| Peak reverse voltage | 120 V |
| Forward current | 250 mA |
| Peak forward current | 625 mA |
| Total power dissipation | 350 mW |
| Junction temperature | 150 °C |
| Storage temperature range | -65 °C to +150 °C |
| Thermal resistance (junction‑ambient) | < 300 K/W |
| Reverse recovery time | 50 ns |
The BAS 19 can withstand a reverse voltage of 100 V.
The peak forward current (Tem) is rated at 625 mA.
The BAS 19 is supplied in a SOT‑23 package.
The reverse recovery time is specified as 50 ns.