2SA1106 is a PNP structure silicon transistor, which is often used in audio power amplifiers and DC/DC converters.
The 2SA1106 is a PNP planar silicon transistor intended for audio power amplifier and DC‑to‑DC converter applications. It offers high current capability and high power dissipation.
Key electrical ratings include a collector‑base voltage of 200 V, collector‑emitter voltage of 140 V, emitter‑base voltage of 6 V, a maximum collector current of 10 A, and a power dissipation of 100 W. The device operates from –55 °C to 150 °C storage temperature and can handle a junction temperature up to 150 °C.
| Collector-Base Voltage (VCBO) | -200 V |
|---|---|
| Collector-Emitter Voltage (VCEO) | -140 V |
| Emitter-Base Voltage (VEBO) | -6 V |
| Collector Current (Ic) | 10 A |
| Collector Dissipation (PC) | 100 W |
| Junction Temperature (Tj) | 150 °C |
| Storage Temperature (Tstg) | -55~150 °C |
| DC Current Gain (hFE1) | 55‑160 |
| Collector‑Emitter Saturation Voltage (VCE(sat)) | -2.0 V |
The maximum collector current is 10 A.
Collector‑Base voltage is 200 V, collector‑emitter voltage is 140 V, and emitter‑base voltage is 6 V.