This document describes the features and characteristics of 2SA1105 PNP planar silicon transistor, including high current capability, high power dissipation, and complementary to 2SC2577. It also provides the absolute maximum ratings and electrical characteristics.
The 2SA1105 is a PNP planar silicon transistor designed for audio power amplifier applications and other high‑current circuits. It offers robust voltage and current ratings suitable for demanding designs.
Key electrical characteristics include a collector‑base voltage of -160 V, collector‑emitter voltage of -120 V, and a maximum collector current of 9 A. The device can dissipate up to 90 W and operates over a wide temperature range from -55 °C to 150 °C.
| Collector‑Base Voltage (V_CBO) | -160 V |
|---|---|
| Collector‑Emitter Voltage (V_CEO) | -120 V |
| Emitter‑Base Voltage (V_EBO) | -6 V |
| Collector Current (I_C) | 9 A |
| Collector Dissipation (P_D) | 90 W |
| Junction Temperature (T_j) | 150 °C |
| Storage Temperature (T_st) | -55~150 °C |
| DC Current Gain (h_FE) typical range | 55–160 |
The maximum collector current is 9 A.
Collector‑Base voltage is -160 V, collector‑emitter voltage is -120 V, and emitter‑base voltage is -6 V.
The transistor can dissipate up to 90 W.