2SA1102 is a PNP type silicon transistor with high current and power dissipation capabilities, and is complementary to 2SC2577.
The 2SA1102 is a PNP planar silicon transistor intended for audio power amplifiers and DC‑DC converters. It offers high current capability and high power dissipation in a compact package.
Key electrical characteristics include a collector‑base voltage of -160 V, collector‑emitter voltage of -120 V, and a maximum collector current of 8 A. The device operates up to a junction temperature of 150 °C and can be stored from -55 °C to 150 °C.
| Collector‑Base Voltage (VCBO) | -160 V |
|---|---|
| Collector‑Emitter Voltage (VCEO) | -120 V |
| Emitter‑Base Voltage (VEBO) | -6 V |
| Collector Current (DC) | -8 A |
| Collector Dissipation (PC) | 80 W |
| Junction Temperature (Tj) | 150 °C |
| Storage Temperature (Tstg) | -55~150 °C |
| DC Current Gain hFE1 | 55‑160 |
| DC Current Gain hFE2 | 50 |
| Collector‑Emitter Saturation Voltage (VCE(sat)) | -1.5 V |
The maximum collector current is 8 A.
VCBO is -160 V, VCEO is -120 V, and VEBO is -6 V.
It can be stored from –55 °C to 150 °C.