This document describes a silicon PNP high frequency, high power transistor primarily used for audio and general purpose. It has a high collector-emitter voltage peak value and collector-emitter saturation voltage, making it suitable for high power applications.
The 2SA1104 is a silicon PNP transistor designed for high‑frequency, high‑power audio and general‑purpose applications. It is supplied in a plastic envelope.
The sheet lists reference data, limiting values and detailed electrical characteristics such as collector‑emitter voltage, collector current, power dissipation, saturation voltage, transition frequency and temperature limits.
| Collector current (DC) | 8 A |
|---|---|
| Storage temperature range | -55 °C to 150 °C |
| Maximum junction temperature | 150 °C |
The transistor can handle up to 8 A of collector current.
It can be stored from –55 °C up to 150 °C.