2SA1123 is a NPN silicon transistor produced by Toshiba of Japan. It is suitable for low-frequency high breakdown voltage amplification and is the complementary tube of 2SC2631. It has good forward current transfer ratio hFE, collector current IC characteristics, high collector to emitter voltage VCEO, small collector output capacitance Cob and other characteristics.
The 2SA1123 is a silicon PNP epitaxial planar transistor designed for low‑frequency, high‑breakdown‑voltage amplification. It pairs with the complementary 2SC2631 for pre‑driver stages of 20‑40 W output amplifiers.
Key electrical ratings include a collector‑to‑emitter voltage of –150 V, peak collector current of –100 mA, power dissipation of 750 mW, and a junction temperature rating of 150 °C. The device also features a small collector output capacitance of about 5 pF and a typical transition frequency of 200 MHz.
| Collector to emitter voltage (VCEO) | -150 V |
|---|---|
| Peak collector current (IC) | -100 mA |
| Power dissipation (PD) | 750 mW |
| Junction temperature (Tj) | 150 °C |
| Storage temperature range | -55 ~ +150 °C |
The maximum collector to emitter voltage is –150 V.
The peak collector current rating is –100 mA.