This document introduces a transistor model 2SC2632, which is a silicon NPN epitaxial planar transistor suitable for low-frequency high breakdown voltage amplification. It features satisfactory linearity of forward current transfer ratio hFE, high collector to emitter voltage VCEO, and small collector output capacitance Cob.
The Panasonic 2SC2632 is a silicon NPN epitaxial planar transistor designed for low‑frequency, high‑breakdown‑voltage amplification. It is complementary to the 2SA1124 PNP device.
Key specifications include a collector‑to‑base voltage of 150 V, collector‑to‑emitter voltage of 150 V, peak collector current of 100 mA, and a transition frequency of 160 MHz. The device is supplied in a TO‑92L package and features low collector output capacitance and satisfactory linearity of the forward current transfer ratio.
| Collector‑to‑base voltage (Vcbo) | 150 V |
|---|---|
| Collector‑to‑emitter voltage (Vceo) | 150 V |
| Emitter‑to‑base voltage (Vebo) | 5 V |
| Peak collector current (Ic max) | 100 mA |
| Continuous collector current (Ic) | 50 mA |
| Power dissipation (Pd) | 1 W |
| Junction temperature (Tj) | 150 °C |
| Storage temperature range | -55 °C to +150 °C |
| Noise voltage (En) | 150 mV (typ) |
The maximum collector‑to‑emitter voltage is 150 V.
The transistor can handle a peak collector current of 100 mA.
It is supplied in a TO‑92L package.