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IDT70P35/34L is a high-performance 1.8V 8/4K x 18 dual-port static RAM with low power consumption and high speed. It has independent upper-byte and lower-byte control for multiplexed bus compatibility.
This document describes the features and characteristics of the IDT7024S/L high-speed 4K x 16 dual-port static RAM, including busy and interrupt flags, port arbitration logic, support for semaphore signaling, asynchronous operation, battery backup operation, industrial temperature range, etc.
This PDF file is an introduction document about IDT49FCT805BT/CT and IDT49FCT806BT/CT products. It mainly introduces the features and characteristics of the products, including 0.5 micron CMOS process, low jitter, low power consumption, TTL compatible inputs and outputs, high drive, two independent output circuits, anti-static electricity and so on
The FCT3805/A is a 3.3 volt, non-inverting clock driver built using advanced dual metal CMOS technology. The device consists of two banks of drivers, each with a 1:5 fanout and its own output enable control. The device has a "heartbeat" monitor for diagnostics and PLL driving. The MON output is identical to all other outputs and complies with the output specifications in this document. The FCT3805/A offers low capacitance inputs with hysteresis. The FCT3805/A is designed for high speed clock distribution where signal quality and skew are critical. The FCT 3805 also allows single point-to-point transmission line driving in applications such as address distribution, where one signal must be distributed to multiple receivers with low skew and high signal quality.
The ICS650-27 is a low cost, low jitter, high performance clock synthesizer for networking applications. Using analog Phase-Locked Loop (PLL) techniques, the device accepts a 12.5 MHz or 25 MHz clock or fundamental mode crystal input to produce multiple output clocks for networking chips, PCI devices, SDRAM, and ASICs. The ICS650-27 outputs all have zero ppm synthesis error. The ICS650-27 is pin compatible and functionally equivalent to the ICS650-07. It is a performance upgrade and is recommended for all new 3.3V designs.
This document introduces a low-power EMI reduction integrated circuit from Alliance Semiconductor. The integrated circuit adopts an FCC-approved method of EMI attenuation and can provide up to 15dB EMI reduction. It can generate 1X, 2X, and 4X low EMI spread spectrum clocks based on the input frequency, which is optimized for the input frequency range of 10 to 40MHz. The integrated circuit has an internal loop filter to minimize external components and board space. It offers selectable spread options of Down Spread and Center Spread, and has low inherent cycle-to-cycle jitter. The operating voltage is 3.3V and it has CMOS/TTL compatible inputs and outputs. The pinout is compatible with Cypress CY25811, CY25812, and CY25814. The product is available for the industrial temperature range and comes in 8-pin SOIC and TSSOP packages.
This document is about HYS 64/72V32300GU SDRAM-Modules. It is a 168-pin Unbuffered DIMM Modules that use 256M Synchronous DRAMs (SDRAMs) and support PC100-222, PC133-333 and PC133-222 versions.
The HY57V561620T is a 268,435,456-bit CMOS Synchronous DRAM, ideally suited for main memory applications that require large memory density and high bandwidth. It is organized as 4 banks of 4,194,304 x 16 and offers fully synchronous operation with internally pipelined design for high bandwidth. It supports programmable options including CAS latency, burst length, and burst count sequence.
HY29F080 is an 8 Megabit (1M x 8) 5 Volt-only flash memory. It features 5 Volt read, program, and erase operations, high performance with access times as fast as 70 ns, low power consumption, and compatibility with JEDEC standards. It supports sector erase architecture, erase suspend/resume, sector group protection, and more.
